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Artigo de periodico
Capacitive immunosensor for COVID-19 diagnosis (2023)
Nascimento, Isabella Sampaio do; Takeuti, Nayla Naomi Kusimoto; Gusson, Beatriz ; Machado, Thales Rafael; Zucolotto, Valtencir
Source: Microelectronic Engineering. Unidade: IFSC
Subjects: SENSORES BIOMÉDICOS, CORONAVIRUS, COVID-19
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ABNT
NASCIMENTO, Isabella Sampaio do et al. Capacitive immunosensor for COVID-19 diagnosis. Microelectronic Engineering, v. 267-268, n. Ja 2023, p. 111912-1-111912-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2022.111912. Acesso em: 28 abr. 2024.
APA
Nascimento, I. S. do, Takeuti, N. N. K., Gusson, B., Machado, T. R., & Zucolotto, V. (2023). Capacitive immunosensor for COVID-19 diagnosis. Microelectronic Engineering, 267-268( Ja 2023), 111912-1-111912-8. doi:10.1016/j.mee.2022.111912
NLM
Nascimento IS do, Takeuti NNK, Gusson B, Machado TR, Zucolotto V. Capacitive immunosensor for COVID-19 diagnosis [Internet]. Microelectronic Engineering. 2023 ; 267-268( Ja 2023): 111912-1-111912-8.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2022.111912
Vancouver
Nascimento IS do, Takeuti NNK, Gusson B, Machado TR, Zucolotto V. Capacitive immunosensor for COVID-19 diagnosis [Internet]. Microelectronic Engineering. 2023 ; 267-268( Ja 2023): 111912-1-111912-8.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2022.111912
Artigo de periodico
Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
Rahim, Abdur; Gusev, G M ; Kvonc, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Microelectronic Engineering. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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ABNT
RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 28 abr. 2024.
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Artigo de periodico
In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs (2015)
Doria, Rodrigo Trevisoli ; Claeys, Cor ; Simoen, Eddy ; Souza, Marcio Alves Sodré de; Martino, João Antonio
Source: Microelectronic Engineering. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DORIA, Rodrigo Trevisoli et al. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs. Microelectronic Engineering, v. 147, n. 1, p. 92-95, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2015.04.056. Acesso em: 28 abr. 2024.
APA
Doria, R. T., Claeys, C., Simoen, E., Souza, M. A. S. de, & Martino, J. A. (2015). In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs. Microelectronic Engineering, 147( 1), 92-95. doi:10.1016/j.mee.2015.04.056
NLM
Doria RT, Claeys C, Simoen E, Souza MAS de, Martino JA. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs [Internet]. Microelectronic Engineering. 2015 ; 147( 1): 92-95.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2015.04.056
Vancouver
Doria RT, Claeys C, Simoen E, Souza MAS de, Martino JA. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs [Internet]. Microelectronic Engineering. 2015 ; 147( 1): 92-95.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.mee.2015.04.056
Trabalho de evento-anais periodico
Hole band structure of p-type delta-doping quantum wells in silicon (1998)
Rosa, A L; Scolfaro, L M R; Sipahi, Guilherme Matos; Enderlein, R; Leite, J. R.
Source: Microelectronic Engineering. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidades: IF, IME
Subjects: MATÉRIA CONDENSADA, ENGENHARIA AUTOMOBILÍSTICA
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ABNT
ROSA, A L et al. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 28 abr. 2024. , 1998
APA
Rosa, A. L., Scolfaro, L. M. R., Sipahi, G. M., Enderlein, R., & Leite, J. R. (1998). Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science.
NLM
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2024 abr. 28 ]
Vancouver
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2024 abr. 28 ]
Trabalho de evento-anais periodico
Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots (1998)
Quivy, A. A.; Leite, J. R.
Source: Microelectronic Engineering. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
QUIVY, A. A. e LEITE, J. R. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 28 abr. 2024. , 1998
APA
Quivy, A. A., & Leite, J. R. (1998). Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science.
NLM
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2024 abr. 28 ]
Vancouver
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2024 abr. 28 ]
Artigo de periodico
Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k (1997)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Source: Microelectronic Engineering. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, v. 36, n. 1-4, p. 375-378, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(97)00083-x. Acesso em: 28 abr. 2024.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1997). Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, 36( 1-4), 375-378. doi:10.1016/s0167-9317(97)00083-x
NLM
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x
Artigo de periodico
Reactive ion etching and plasma etching of tungsten (1993)
Verdonck, Patrick Bernard; Brasseur, G.; Swart, J.
Source: Microelectronic Engineering. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
VERDONCK, Patrick Bernard e BRASSEUR, G. e SWART, J. Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, v. 21, p. 329-332, 1993Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(93)90084-i. Acesso em: 28 abr. 2024.
APA
Verdonck, P. B., Brasseur, G., & Swart, J. (1993). Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, 21, 329-332. doi:10.1016/0167-9317(93)90084-i
NLM
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i
Vancouver
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i
Artigo de periodico
Laser enhanced polymer etching in different ambients (1989)
Verdonck, Patrick Bernard; Brasseur, G.; Coopmans, F.
Source: Microelectronic Engineering. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
VERDONCK, Patrick Bernard e BRASSEUR, G. e COOPMANS, F. Laser enhanced polymer etching in different ambients. Microelectronic Engineering, v. 9, p. 507-510, 1989Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(89)90111-1. Acesso em: 28 abr. 2024.
APA
Verdonck, P. B., Brasseur, G., & Coopmans, F. (1989). Laser enhanced polymer etching in different ambients. Microelectronic Engineering, 9, 507-510. doi:10.1016/0167-9317(89)90111-1
NLM
Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1
Vancouver
Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1

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